Temperature Analysis and Characteristics of Highly Strained InGaAs-GaAsP-GaAs (λ > 1.17 μm) Quantum-Well Lasers.

Autor: Tansu, Nelson, Ying-Lan Chang, Takeuchi, Tetsuya, Bour, David P., Corzine, Scott W., Tan, Michael R.T., Mawst, Luke J.
Předmět:
Zdroj: IEEE Journal of Quantum Electronics; Jun2002, Vol. 38 Issue 6, p640, 12p, 2 Diagrams, 1 Chart, 6 Graphs
Abstrakt: Analyzes the temperature and characteristics of highly strained quantum-well lasers. Consideration of the external differential quantum efficiency; Increase of the demand for higher bandwidth in optical fiber communications; Sensitivity of the laser performance to temperature changes.
Databáze: Complementary Index