| Autor: |
Quevedo-Lopez, M. A., El-Bouanani, M., Kim, M. J., Gnade, B. E., Wallace, R. M., Visokay, M. R., LiFatou, A., Bevan, M. J., Colombo, L. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 8/5/2002, Vol. 81 Issue 6, p1074, 3p, 1 Diagram, 2 Graphs |
| Abstrakt: |
We present detailed B penetration studies from B-doped polysilicon through alternate gate dielectric candidate HfSi[sub x]O[sub y] films. No detectible B penetration is observed for annealing times as long as 20 s after 950 °C. Considerable B incorporation into the Si substrate is observed for annealing temperatures higher than 950 °C. By modeling the B depth profiles, we calculated the B diffusivities through HfSi[sub x]O[sub y] to be higher than the corresponding diffusivities for SiO[sub 2]. B diffusion through grain boundaries after HfSi[sub x]O[sub y] crystallization is proposed to be responsible for the enhanced B diffusivity observed. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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