| Autor: |
Brezna, W., Harasek, S., Bertagnolli, E., Gornik, E., Smoliner, J., Enichlmair, H. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 8/15/2002, Vol. 92 Issue 4, p2144, 5p, 4 Graphs |
| Abstrakt: |
In this article, we explore the properties of ZrO[sub 2] as dielectric material for scanning capacitance microscopy (SCM). The ZrO[sub 2] layers were grown by chemical vapor deposition (CVD) at T = 450°C. The low growth temperature together with the good reproducibility of the CVD process and the high dielectric constant make ZrO[sub 2] a very promising material for SCM applications. Compared with SiO[sub 2] as dielectric material, much thicker ZrO[sub 2] layers can be used resulting in reduced leakage currents and improved signal quality. For SiO[sub 2] and ZrO[sub 2] layers having the same thickness, the latter yields higher signals and therefore an enhanced sensitivity. Furthermore, ZrO[sub 2] was found to be quite insensitive to parasitic charging effects, which often disturb SCM measurements on samples with SiO[sub 2] layers. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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