| Autor: |
Johnston, Allan, Swimm, Randall, Harris, Richard D., Thorbourn, Dennis |
| Předmět: |
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| Zdroj: |
IEEE Transactions on Nuclear Science; 12/1/2011 Part 1 Part 1, Vol. 58 Issue 6, p2816-2823, 8p |
| Abstrakt: |
Dose rate effects are examined in linear bipolar transistors at high and low dose rates. At high dose rates, approximately 50% of the damage anneals at room temperature, even though these devices exhibit enhanced damage at low dose rate. The unexpected recovery of a significant fraction of the damage after tests at high dose rate requires changes in existing test standards. Tests at low temperature with a one-second radiation pulse width show that damage continues to increase for more than 3000 seconds afterward, consistent with predictions of the CTRW model for oxides with a thickness of 700 nm, the thickness of the oxide over the emitter-base junction of pnp transistors in this process. [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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