| Autor: |
Zhou, Xiaolan, Stern, Ilan, Silwal, Punam, Miao, Ludi, Ho Kim, Dae |
| Předmět: |
|
| Zdroj: |
Applied Physics Letters; 1/16/2012, Vol. 100 Issue 3, p032902, 4p, 4 Graphs |
| Abstrakt: |
A coherent in-plain tensile strain was achieved in epitaxial films of perovskite Ba0.8Sr0.2TiO3 grown on spinel MgAl2O4 (001) substrates by inserting Ni0.6Al0.4O1 + δ buffer layers. The epitaxial buffer layer exhibits high crystalline quality with a tetragonal symmetry due to the pseudomorphic strain from the spinel substrate and allows coherent growth of the perovskite film. In contrast to the typical ferroelectric hysteresis loops measured along an in-plane direction from strain-relaxed Ba0.8Sr0.2TiO3 films grown directly on the spinel substrate, similar measurements from the buffered films show double hysteretic behavior, indicating the significant influence of isotropic tensile strain on the ferroelectricity. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
