Autor: |
Heon Kim, Young, Woo Park, Dong, Jun Lee, Sang |
Předmět: |
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Zdroj: |
Applied Physics Letters; 1/16/2012, Vol. 100 Issue 3, p033117, 4p, 2 Black and White Photographs, 1 Graph |
Abstrakt: |
When the arsenic (As) precursor was supplied during cool down, the gallium (Ga) droplets on top of GaAs nanowires (NWs) were extinct on the final products. The Ga droplets were conserved, and their behaviors depended on the size of the NWs when the As supply was cut off during the cooling: The contact angles of the droplets on the NWs with diameters larger than 60 nm were fixed to approximately 113°. However, they were decreased and fluctuated on the NWs less than 60 nm in diameter. Finally, the NWs less than 46 nm were free from the Ga droplet. [ABSTRACT FROM AUTHOR] |
Databáze: |
Complementary Index |
Externí odkaz: |
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