| Autor: |
Lee, Jaeyel, Woo, Jong-Seok, Park, Sehun, Kim, Jungsub, Yang, Changjae, Kim, Sujin, Seok, Chulkyun, Lee, Kang Il, Park, Jinsub, Han, Min-Koo, Seo, Kwang-Seok, Yoon, Euijoon |
| Předmět: |
|
| Zdroj: |
AIP Conference Proceedings; 12/22/2011, Vol. 1399 Issue 1, p105-106, 2p |
| Abstrakt: |
We report the enhanced interface properties between passivation layers and InSb by using remote PECVD system. SiO2 and Si3N4 layers deposited by remote PECVD showed lower interface trap densities than layers deposited by normal PECVD. SiO2 layers deposited by remote PECVD showed 7.1×1011 cm-2 eV-1 of interface trap density at midgap which is slightly lower than SiO2 layers deposited by PECVD. Si3N4 layers deposited by remote PECVD showed 1.6∼1.7×1012 cm-2 eV-1 at midgap which is 3 times lower than Si3N4 layers deposited by PECVD. Interface properties of SiO2 are superior to that of Si3N4 in both case of PECVD and remote PECVD. To investigate the interface properties between SiO2 and InSb, X-ray photoelectron spectroscopy was conducted. Indium and antimony oxide phases were found at the interface and these oxide phases could act as the origin of interface traps. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
