| Autor: |
Xiong, Gang, Leake, S., Newton, M. C., Huang, X., Harder, R., Robinson, Ian K. |
| Předmět: |
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| Zdroj: |
AIP Conference Proceedings; 12/22/2011, Vol. 1399 Issue 1, p1069-1070, 2p |
| Abstrakt: |
Strain induced in nanostructure semiconductor materials can result in different electronic properties. Coherent x-ray diffraction (CXD) has emerged as a non-destructive tool for imaging of strain and defects. In this work CXD is applied on a single ZnO nanorod, diffraction patterns from Bragg reflection are used to reconstruct the strain distribution in the samples at a resolution of 40 nm. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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