| Autor: |
Misa, J. V. A., Porquez, J. G., Defensor, M. J., Jaculbia, R. B., Balgos, M. H. M., Somintac, A. S., Salvador, A. A. |
| Předmět: |
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| Zdroj: |
AIP Conference Proceedings; 12/22/2011, Vol. 1399 Issue 1, p231-232, 2p |
| Abstrakt: |
Self-Catalyzed GaAs nanorods (NRs) were grown directly on Silicon (100) and (111) substrates via Molecular Beam Epitaxy. Scanning Electron Microscopy shows that the nanorod lengths ranging from 1 to 12 um with diameter between 30 to 200 nm can be achieved. It is established that nanorod growth is favored between 660 to 680 °C, time studies reveal that NRs grow initially via a VLS mechanism and that Ga flux influences the tilt angle of NRs. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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