Spin relaxation and spin-diffusion length of conduction electrons in silicon with different compositions of isotopes.

Autor:	Ezhevskii, Alexandr A., Soukhorukov, Andrey V., Guseinov, Davud V., Popkov, Sergey A., Gusev, Anatoliy V., Gavva, Vladimir A.
Předmět:	CONDUCTION electrons SILICON isotopes RELAXATION phenomena DIFFUSION HYPERFINE interactions TEMPERATURE effect ATOMIC number
Zdroj:	AIP Conference Proceedings; 12/22/2011, Vol. 1399 Issue 1, p743-744, 2p
Abstrakt:	Spin-relaxation and spin diffusion of conduction electrons were studied in silicon enriched by 28Si and 29Si isotopes in order to determine the contribution of hyperfine interaction of conduction electrons with magnetic nuclei of 29Si isotope. The g-factors dependencies on temperature, donor concentration and atomic number of donors were analyzed to study the impurity and lattice spin-orbit interaction involvement to the relaxation processes for conduction electrons. [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu