| Autor: |
Dan'ko, V. A., Bratus', V. Ya., Indutnyi, I. Z., Lisovskyy, I. P., Zlobin, S. O., Michailovska, K. V., Shepeliavyi, P. E. |
| Předmět: |
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| Zdroj: |
Semiconductor Physics, Quantum Electronics & Optoelectronics; 2010, Vol. 13 Issue 4, p413-417, 5p |
| Abstrakt: |
The effect of HF and H2O2 vapor treatment on the spectral composition and intensity of photoluminescence (PL) in porous oblique deposited nc-Si-SiOx structures have been studied using FTIR, electron-spin resonance (EPR) and PL measurements. As a result of HF vapor treatment, considerable PL intensity growth and blueshift of PL peak position are observed. It is suggested that the evolution of the PL spectra in HF vapor-treated samples can be attributed to selective-etching-induced decrease in Si nanoparticle dimensions and to passivation of Si dangling bonds (that are nonradiative recombination trap states) by hydrogen and oxygen. Additional treatment in H2O2 vapor results in additional nc-Si surface oxidation and reduction of nc-Si size. The possibility to control the PL characteristics (peak position and intensity) of the porous nc-Si-SiOx structures in a wide range by above treatments is shown.. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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