| Autor: |
Molodkin, V. B., Olikhovskii, S. I., Kyslovskyy, Ye. M., Len, E. G., Reshetnyk, O. V., Vladimirova, T. P., Lizunov, V. V., Lizunova, S. V. |
| Předmět: |
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| Zdroj: |
Semiconductor Physics, Quantum Electronics & Optoelectronics; 2010, Vol. 13 Issue 4, p353-356, 4p |
| Abstrakt: |
The generalized dynamical theory of X-ray scattering by real single crystals allows to self-consistently describe intensities of coherent and diffuse scattering measured by double- and triple-crystal diffractometers (DCD and TCD) from single crystals with defects in crystal bulk and with strained subsurface layers. Being based on this theory, we offer the combined DCD+TCD method that exhibits the higher sensitivity to defect structures with wide size distributions as compared with any of these methods alone. In the investigated Czochralski-grown silicon crystals, the sizes and concentrations of small oxygen precipitates as well as small and large dislocation loops have been determined using this method. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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