| Autor: |
Ouma, D. Okumu, Boning, Duane S., Chung, James E., Easter, William G., Saxena, Vivek, Misra, Sudhanshu, Crevasse, Annette |
| Předmět: |
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| Zdroj: |
IEEE Transactions on Semiconductor Manufacturing; May2002, Vol. 15 Issue 2, p232, 13p, 8 Black and White Photographs, 9 Diagrams, 5 Charts, 24 Graphs |
| Abstrakt: |
Characterizes the oxide chemical-mechanical polishing using planarization length and pattern density concepts. Reduction of topography over lateral distances; Variation in polished oxide thickness across chips; Definition of standard test layouts. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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