| Autor: |
Chim, W. K., Wong, K. M., Teo, Y. L., Lei, Y., Yeow, Y. T. |
| Předmět: |
|
| Zdroj: |
Applied Physics Letters; 6/24/2002, Vol. 80 Issue 25, p4837, 3p, 4 Graphs |
| Abstrakt: |
This article proposes a more accurate approach to dopant extraction using combined inverse modeling and forward simulation of scanning capacitance microscopy (SCM) measurements on p-n junctions. The approach takes into account the essential physics of minority carrier response to the SCM probe tip in the presence of lateral electric fields due to a p-n junction. The effects of oxide fixed charge and interface state densities in the grown oxide layer on the p-n junction samples were considered in the proposed method. The extracted metallurgical and electrical junctions were compared to the apparent electrical junction obtained from SCM measurements. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
