| Autor: |
Chua, C. L., Thornton, R. L., Treat, D. W., Kneissl, M., Dunnrowicz, C. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 3/2/1998, Vol. 72 Issue 9, p1001, 3p |
| Abstrakt: |
We present top-emitting all-epitaxial planar laterally oxidized vertical-cavity surface-emitting lasers employing transparent indium-tin-oxide electrodes. The transparent contacts facilitate device fabrication and offer significantly denser device packing than similar planar laterally oxidized structures using metal contacts. The InAlGaAs-based devices operate at a wavelength of 817 nm with a minimum threshold current of 175 µA. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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