| Autor: |
Germain, M., Kartheuser, E., Gurskii, A. L., Lutsenko, E. V., Marko, I. P., Pavlovskii, V. N., Yablonskii, G. P., Heime, K., Heuken, M., Schineller, B. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 6/15/2002, Vol. 91 Issue 12, p9827, 8p, 1 Diagram, 2 Charts, 4 Graphs |
| Abstrakt: |
A coherent analysis of the near-band-edge luminescence spectra of undoped and Si-doped GaN layers grown by metalorganic vapor phase epitaxy on a sapphire substrate has been performed with a model including the effect of the charge carrier-longitudinal optical (LO) phonon interaction, based on Fröhlich's polaron theory. This model allows one to correlate the relative intensities of the phonon sidebands to the position of the zero-phonon line from which ionization energies are obtained. Moreover, central-cell corrections are taken into account using two different models: the quantum defect model and the Lucovsky model [Solid State Comm. 3, 299 (1965)]. The effect of the electron-LO phonon interaction has been included in these models. Comparison between theory and experiment through the Huang-Rhys factor [Proc. Roy Soc. A204, 406 (1950)] allows a precise determination of the impurity binding energies and effective radii, as well as a reliable characterization of the charge carrier-LO phonon interaction. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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