| Autor: |
Raynaud, C., Isoird, K., Lazar, M., Johnson, C. M., Wright, N. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 6/15/2002, Vol. 91 Issue 12, p9841, 7p, 1 Diagram, 3 Charts, 13 Graphs |
| Abstrakt: |
Extractions of barrier heights of 6H and 4H-SiC Schottky diodes have been performed on structures with various gate metallization, using both capacitance-voltage (C-V) and current-voltage (I-V) measurements. The sum of the two barriers extracted by C-V measurements on both n-type and p-type materials is found to be higher than the band gap energy E[sub G], whereas the one extracted by I-V is less than E[sub G]. However, above room temperature, temperature variations of barrier heights are in agreement with the variations of E[sub G]. We have also computed theoretical I-V characteristics using a two-barrier height model. By taking account of temperature variations of a large number of parameters, e.g., the carrier mobility, free carrier concentration, and barrier height, we have achieved a good fit with experimental data. The model is shown to be valid for n-type Schottky diodes over a wide range of temperatures (from 100 to 500 K). [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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