Al fraction induced effects on the capacitance characteristics of n+-GaN/AlxGa1-xN IR detectors.
| Autor: | Byrum, Laura E., Ariyawansa, Gamini, Jayasinghe, Ranga, Dietz, Nikolaus, Perera, A. G. Unil, Matsik, Steven G., Ferguson, Ian T., Bezinger, Andrew, Liu, Hui Chun |
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| Zdroj: | Proceedings of SPIE; Nov2009 Part 3, Issue 1, p74670W-74670W-9, 9p |
| Databáze: | Complementary Index |
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