Autor: |
Kononchuk, Oleg, Riou, Gregory, Brun, Roland, Moulin, Cecile |
Předmět: |
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Zdroj: |
AIP Conference Proceedings; 11/15/2011, Vol. 1395 Issue 1, p183-187, 5p |
Abstrakt: |
Future generations of CMOS technology require aggressive scaling of SOI and BOX layer thickness. This will pose significant challenges for SOI specific metrology. Future requirements for layer thickness measurements, LPD inspection, electrical and structural characterization of SOI stack are discussed. Possible directions for future development of appropriate techniques are proposed. [ABSTRACT FROM AUTHOR] |
Databáze: |
Complementary Index |
Externí odkaz: |
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