| Autor: |
Vlasenko, N., Sopinskii, N., Gule, E., Manoilov, E., Oleksenko, P., Veligura, L., Mukhlyo, M. |
| Předmět: |
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| Zdroj: |
Semiconductors; Nov2011, Vol. 45 Issue 11, p1414-1419, 6p |
| Abstrakt: |
A band with a peak at 890 nm is detected in the photoluminescence spectra of SiO ( x ≈ 1.3) films deposited by thermal evaporation of SiO and annealed in air at 650-1150°C. The 890-nm band appears after low-temperature (∼650°C) annealing and exhibits a number of features: (i) as the annealing temperature is elevated to 1150°C, the position of the band peak remains unchanged, whereas the intensity increases by two orders of magnitude; (ii) the effects of the annealing atmosphere (air, vacuum) and the excitation wavelength and power density on the intensity of the 890-nm band differ from the corresponding effects on the well-known bands observable in the ranges 600-650 and 700-800 nm; and (iii) the photoluminescence decay is first fast and then much slower, with corresponding lifetimes of ∼9 and ∼70 μs. The observed features are inconsistent with the interpretation of photoluminescence observed in SiO so far. Specifically, the earlier observed photoluminescence was attributed to transitions between the band and defect states in the matrix and between the states of band tails, transitions inside Si nanoclusters, and intraion transitions in rare-earth impurity ions. Therefore, we consider here the possibility of attributing the 890-nm band to transitions in local centers formed by silicon ions twofold- and/or threefold-coordinated with oxygen; i.e., we attempt to interpret the 890-nm band in the same manner as was done for luminescence in SiO glasses and films slightly deficient in oxygen. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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