| Autor: |
Elliott, S. L., Broom, R. F., Humphreys, C. J. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 6/1/2002, Vol. 91 Issue 11, p9116, 7p, 2 Black and White Photographs, 1 Diagram, 2 Charts, 6 Graphs |
| Abstrakt: |
This article describes the results of a detailed study of semiconductor dopant profiling with the scanning electron microscope (SEM) using secondary electrons. The technique has been applied to a wide variety of doped silicon test structures as well as a metal-oxide field-effect transistor. We have demonstrated that contrast can be detected from p-doped regions as thin as one nanometer across. Contrast can also be measured from p-type regions with doping concentrations less than 10[sup 16] cm[sup -3]. We have studied the variation of doping contrast with specimen temperature and with a bias applied across a p-n junction in situ in the SEM. These experiments demonstrate that doping contrast is mainly due to the built-in voltages in semiconductor devices which result in local fields (patch fields) outside the specimen which influence the number of secondary electrons detected. A concise set of guidelines is provided for users of this technique, including the optimum SEM operating conditions that should be used for maximum contrast. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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