| Autor: |
Eickelkamp, M., Weingarten, M., Rahimzadeh Khoshroo, L., Ketteniss, N., Behmenburg, H., Heuken, M., Donoval, D., Chvála, A., Kordosˇ, P., Kalisch, H., Vescan, A. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; Oct2011, Vol. 110 Issue 8, p084501, 5p |
| Abstrakt: |
In this work, we report on the thermal oxidation of AlInN/AlN/GaN heterostructures. A 'nearly native' Al2O3 oxide was formed during this oxidation procedure, which can be used as a gate oxide and thus enables the fabrication of metal insulator semiconductor hetero field effect transistors. A constant barrier height of [uppercase_phi_synonym]B ≈ 2.34 eV was obtained for all oxidized samples, independent of the oxidation time and temperature, indicating a stable AlInN-oxide interface. The interface state density was approximated to be as low as Nint = 2.5 × 1012 cm-2. Oxide thicknesses were estimated to be in the range of 0.6 nm and 3.2 nm, resulting in a suppression of reverse leakage currents oflarge area metal insulator semiconductor diodes by up to three orders of magnitude. Two-dimensional electron gas density and, in particular, carrier mobility are strongly affected by the thermal oxidation in the O2 atmosphere. A narrow processing window for successful thermal oxidation was identified, covering temperatures between 700 °C and 800 °C and durations of few minutes. The resulting oxide thickness scales well with the square root of oxidation time, indicating diffusion of oxygen atoms into the barrier. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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