Tunneling through stacked InAs/InGaAs/InP self-assembled quantum dots in a magnetic field.

Autor: Silva, A. G., Lopez, F. E., Guimarães, P. S. S., Pires, M. P., Souza, P. L., Landi, S. M., Villas-Bôas, J. M., Vieira, G. S., Vinck-Posada, H., Rodriguez, B. A.
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Zdroj: Journal of Applied Physics; Oct2011, Vol. 110 Issue 8, p083717, 5p
Abstrakt: We report results of an investigation of vertical transport in stacked InAs/InGaAs/InP self-assembled quantum dot multi-layers and show evidence of tunneling between quantum dot states in adjacent layers. In the presence of magnetic fields up to 12 T applied parallel to the current, tunneling through Zeeman-split quasi-zero dimensional states is observed. The difference in the g factor of two quantum dots in adjacent layers, which is due to the difference in confinement, is estimated from the data. The experimental value obtained for the difference in g factor is in good agreement with that obtained from a calculation of the quantum dots' energy levels in the presence of the magnetic field. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index