| Autor: |
Chen, Yu-Sheng, Lee, Heng-Yuan, Chen, Pang-Shiu, Liu, Wen-Hsing, Wang, Sum-Min, Gu, Pei-Yi, Hsu, Yen-Ya, Tsai, Chen-Han, Chen, Wei-Su, Chen, Frederick, Tsai, Ming-Jinn, Lien, Chenhsin |
| Předmět: |
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| Zdroj: |
IEEE Electron Device Letters; Nov2011, Vol. 32 Issue 11, p1585-1587, 3p |
| Abstrakt: |
The effect of operation current on the high-resistance state and the endurance for the \HfOX-based resistive device is comprehensively studied. Due to the current overshoot by the parasitic capacitances, an excess current leakage for the high-resistance state of the 1R device after the forming and SET stages is observed. The accelerated degradation of the high-resistance state for the \HfOX device undergoing a high-operation-current stage is revealed for the first time. As the compliance current increases beyond 500 \mu\A, the resistance of the high-resistance state of the device deceases drastically. A possible scenario about the correlation between the high-resistance state and the compliance current based on the filament model is proposed. By suppressing the current overshoot with the 1T1R device, the high-resistance state (> \1\ \M\Omega) and excellent endurance (> \10^8\ \cycles) for the \HfOX resistive memory are demonstrated. [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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