| Autor: |
Rahul, Vishwakarma, S. R., Verma, Aneet Kumar, Tripathi, Ravishankar Nath |
| Předmět: |
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| Zdroj: |
AIP Conference Proceedings; 10/20/2011, Vol. 1391 Issue 1, p758-760, 3p, 2 Charts, 1 Graph |
| Abstrakt: |
Indium Antimonide (InSb) is a promising materials for mid and long wavelength infrared & high speed devices applications because of its small band gap. The Indium Antimonide (InSb) thin films have been deposited onto well cleaned glass substrate at different substrate temperatures (300 K, 323 K, 373 K) by electron beam evaporation technique in the high vacuum chamber at vacuum pressure ∼10-5 torr using prepared non-stoichiometric InSb powder using formula In1-xSbx (0.214 cm-3 and mobility ∼103 cm2/Vs for the film thickness of 300 nm. It is also observed that the carrier concentration (N) decreases and the Hall mobility (μ) increases with the increase of substrate temperature. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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