Spin-filter spin valves with nano-oxide layers for high density recording heads.

Autor: Al-Jibouri, Abdul, Hoban, M., Lu, Z., Pan, G.
Předmět:
Zdroj: Journal of Applied Physics; 5/15/2002 Part 1, 2 & 3, Vol. 91 Issue 10, p7098, 3p, 2 Diagrams, 4 Graphs
Abstrakt: A new spin-filter spin valve with nano-oxide specular layers with structure of Ta/NiFe/IrMn/CoFe/NOL[sub 1]/CoFe/Cu/CoFet[sub fl]/Cut[sub Cu]/NOL[sub 2]/Ta was deposited using a Nordiko 9606 physical vapor deposition system. The data clearly show that the magnetoresistive (MR) ratio has been significantly improved for spin valves with thinner free layers. The MR ratio remains larger than 12% even when the CoFe free layer is as thin as 1 nm. An optimized MR ratio of ∼15% was obtained when t[sub fl] was about 1.2 nm and t[sub Cu] about 1.5 nm, and was a result of the balance between the increase in the electron mean free path difference and current shunting through the conducting layer. It is also found that the Cu enhancing layer can improve soft magnetic properties of the CoFe free layer due to the low atomic intermixing observed between Co and Cu. The CoFe free layer of 1-4 nm exhibited coercivity of∼3 Oe after annealing in a static magnetic field. This kind of spin valve with a very thin soft CoFe free layer is particularly attractive for ultra high density read head applications. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index