| Autor: |
Jo, S., Seigler, M. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 5/15/2002 Part 1, 2 & 3, Vol. 91 Issue 10, p7110, 3p, 5 Graphs |
| Abstrakt: |
Magnetoresistance and interlayer coupling behavior near the first antiferromagnetic coupling maximum in underlayer 55 Å/NiFe 10 Å/CoFe/Cu/CoFe/Ru 4 Å/CoFe/IrMn 70 Å/overlayer 50 Å top spin valve structures are reported. As the Cu spacer thickness decreased, interlayer coupling turned to antiferromagnetic at 10 Å of Cu thickness and the coupling field reached maximum near 8 Å of Cu thickness, when the thickness of the CoFe layers was ∼20 Å. Magnetoresistance ratio reached a local minimum at 12 Å of Cu thickness where the ferromagnetic coupling is maximum, and at 10 Å where the coupling field is nearly zero. The sheet resistance change increased slightly at very thin Cu thickness for films having CoFe thickness of ∼20 Å, but increased significantly (by 0.5 Ω/... from 2.2 to 2.7 Ω/...) for films having very thin (∼10 Å) CoFe layers due to considerable decrease of current shunting. These thin CoFe and Cu layers may be utilized for very small devices where the RKKY coupling of the layers is dominated by high demagnetizing fields. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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