| Autor: |
Morales-Paliza, M. A., Haglund, R. F., Feldman, L. C. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 5/20/2002, Vol. 80 Issue 20, p3757, 3p, 3 Graphs |
| Abstrakt: |
The use of [sup 18]O[sub 2] as a background gas in pulsed-laser deposition (PLD) of indium-tin-oxide (ITO) films allows clear discrimination between the two oxygen sources in the films: target and background gas. A study of both stoichiometric and electrical properties of the ITO films in terms of the relative contributions of the two oxygen sources at different background-gas pressures is presented in this work. The film with lowest resistivity (∼4 x 10[sup -4] Ω cm) incorporates 28% oxygen from the background gas as compared to the total oxygen in the film. This relatively strong oxygen incorporation from the background gas suggests a strong exchange rate between [sup 16]O from the target and [sup 18]O from the background gas in the "plume" phase of the PLD process. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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