| Autor: |
Koh, Shao-Ming, Wang, Xincai, Thanigaivelan, Thirumal, Henry, Todd, Erokhin, Yuri, Samudra, Ganesh S., Yeo, Yee-Chia |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; Oct2011, Vol. 110 Issue 7, p073703, 6p |
| Abstrakt: |
We investigate the tuning of Schottky barrier height (SBH) of nickel silicide formed by pulsed excimer laser anneal of nickel on silicon implanted with aluminum (Al). A wide range of laser fluence was investigated, and it has been found that laser fluence influences the distribution of Al within the silicide and at the silicide/silicon interface. This in turn affects the effective whole SBH ([uppercase_phi_synonym]Bp) at the silicide/silicon junction. High Al concentration at the silicide/silicon interface and high temperature for nano-second duration to achieve Al activation while keeping the Al concentration within the silicide low is vital for achieving low [uppercase_phi_synonym]Bp. We demonstrate the achievement of one of the lowest reported [uppercase_phi_synonym]Bp of ∼0.11 eV. This introduces a new option for forming nickel silicide contacts with reduced contact resistance at low thermal budget for possible adoption in future metal-oxide-semiconductor transistor technologies. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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