Reduced auger recombination in mid-infrared semiconductor lasers.

Autor: Bedford, Robert G., Triplett, Gregory, Tomich, David H., W. Koch, Stephan, Moloney, Jerome, Hader, Jörg
Předmět:
Zdroj: Journal of Applied Physics; Oct2011, Vol. 110 Issue 7, p073108, 6p
Abstrakt: A quantum-design approach to reduce the Auger losses in λ = 2 μm InGaSb type-I quantum well edge-emitting lasers is reported. Experimentally realized structures show a ∼3 × reduction in the threshold, which results in 4.6 × lower Auger current loss at room temperature. This is equivalent to a carrier lifetime improvement of 5.7 × and represents about a 19-fold reduction in the equivalent 'Auger coefficient.' [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index