| Autor: |
Tessmann, Axel, Leuther, Arnulf, Hurm, Volker, Kallfass, Ingmar, Massler, Hermann, Kuri, Michael, Riessle, Markus, Zink, Martin, Loesch, Rainer, Seelmann-Eggebert, Matthias, Schlechtweg, Michael, Ambacher, Oliver |
| Předmět: |
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| Zdroj: |
IEEE Journal of Solid-State Circuits; Sep2011, Vol. 46 Issue 10, p2193-2202, 10p |
| Abstrakt: |
In this paper, we present the development of submillimeter-wave monolithic integrated circuits (S-MMICs) and modules for use in next-generation sensors and high-data-rate wireless communication systems, operating in the 300–500-GHz frequency regime. A four-stage 460-GHz amplifier MMIC and a 440-GHz class-B frequency doubler circuit have been successfully realized using our 35-nm InAlAs/InGaAs-based metamorphic high-electron mobility transistor (mHEMT) technology in combination with grounded coplanar circuit topology (GCPW). Additionally, a 500-GHz amplifier MMIC was fabricated using a more advanced 20-nm mHEMT technology. To package the submillimeter-wave circuits, a set of waveguide-to-microstrip transitions has been fabricated on both 50-\mum-thick quartz and GaAs substrates, covering the frequency range between 220 and 500 GHz. The E-plane probes were integrated in a four-stage 20-nm cascode amplifier circuit to realize a full H-band (220 to 325 GHz) S-MMIC amplifier module with monolithically integrated waveguide transitions. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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