| Autor: |
Yizhu Xie, Ziwei Ma, Yuroug Su, Yanxia Liu, Lixin Liu, Haiting Zhao, Jinyuan Zhou, Zhenxing Zhang, Jian Li, Erqing Xie |
| Předmět: |
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| Zdroj: |
Journal of Materials Research; 1/14/2011, Vol. 26 Issue 1, p80-54, 5p |
| Abstrakt: |
Hafnium dioxide (HfO2) thin films were synthesized on silicon and quartz substrates by thermal oxidation of metallic hafnium films in oxygen. The crystalline structure and optical properties of the HfO2 films were systematically investigated using x-ray diffraction, ultraviolet (UV)-Raman, and UV-visible spectrophotometer techniques. All the films thermally oxidized at 450 to 800 °C were mostly monoclinic. Interestingly, cubic phase coexisted with monoclinic phase in the films thermally oxidized at 500 to 600 °C. The corresponding optical band gap (Eg) varied from 5.92 to 6.08 eV for the films with a different phase ratio (cubic to monoclinic one) ranging between 0 and 1:3. These results imply that the mixed phase could have a certain effect on the increase of the Eg of HfO2 films. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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