Mechanistic understanding of post-etch roughness in 193-nm photoresists.
Autor: | Bae, Young C., Barclay, George G., Bolton, Patrick J., Kavanagh, Robert J., Bu, Lujia, Kobayashi, Tatum, Adams, Tim, Pugliano, Nick, Thackeray, James W. |
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Zdroj: | Proceedings of SPIE; Nov2003, Issue 1, p665-671, 7p |
Databáze: | Complementary Index |
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