Mechanistic understanding of post-etch roughness in 193-nm photoresists.

Autor: Bae, Young C., Barclay, George G., Bolton, Patrick J., Kavanagh, Robert J., Bu, Lujia, Kobayashi, Tatum, Adams, Tim, Pugliano, Nick, Thackeray, James W.
Zdroj: Proceedings of SPIE; Nov2003, Issue 1, p665-671, 7p
Databáze: Complementary Index