3- to 5 m InGaAs/AlGaAs QWIP heterostructure growth by metal organic chemical vapor deposition.

Autor: Budkin, I. V., Bulaev, P. V., Vacilevskay, L. M., Zalevsky, I. D., Kuznetsov, U. A., Kulikov, V. B., Marmalyuk, A. A., Nikitin, D. B., Padalitsa, A. A., Petrovsky, A. V., Khatountsev, A. I.
Zdroj: Proceedings of SPIE; Nov2003, Issue 1, p178-180, 3p
Databáze: Complementary Index