3- to 5 m InGaAs/AlGaAs QWIP heterostructure growth by metal organic chemical vapor deposition.
Autor: | Budkin, I. V., Bulaev, P. V., Vacilevskay, L. M., Zalevsky, I. D., Kuznetsov, U. A., Kulikov, V. B., Marmalyuk, A. A., Nikitin, D. B., Padalitsa, A. A., Petrovsky, A. V., Khatountsev, A. I. |
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Zdroj: | Proceedings of SPIE; Nov2003, Issue 1, p178-180, 3p |
Databáze: | Complementary Index |
Externí odkaz: |