Computer simulation of the creation of 31P-doped layer in 28Si/30Si/28Si heterostructure by neutron transmutation doping.

Autor: Trushin, Yuri V., Mikhailov, Gennadi V., Zhurkin, Evgeni E., Kharlamov, Vladimir S., Schmidt, Alexander A., Krusenstern, Fedor A.
Zdroj: Proceedings of SPIE; Nov2003, Issue 1, p124-127, 4p
Databáze: Complementary Index