Nanocrystal formation in thermally oxidized and annealed a-Si:H films and SiOxNy films (x=0.17; y=0.07).

Autor: Kohli, Sandeep, Theil, Jeremy A., Snyder, Rick D., Rithner, Christopher D., Dorhout, Peter K.
Zdroj: Proceedings of SPIE; Nov2003, Issue 1, p8-16, 9p
Databáze: Complementary Index