Nanocrystal formation in thermally oxidized and annealed a-Si:H films and SiOxNy films (x=0.17; y=0.07).
Autor: | Kohli, Sandeep, Theil, Jeremy A., Snyder, Rick D., Rithner, Christopher D., Dorhout, Peter K. |
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Zdroj: | Proceedings of SPIE; Nov2003, Issue 1, p8-16, 9p |
Databáze: | Complementary Index |
Externí odkaz: |