Almost temperature-insensitive characteristics in 1.06-m InGaAs laser diodes with strain-compensating electron-barrier layers.

Autor: Hayakawa, Toshiro, Asano, Hideki, Wada, Mitsugu, Fukunaga, Toshiaki
Zdroj: Proceedings of SPIE; Nov1999, Issue 1, p106-114, 9p
Databáze: Complementary Index