Comparison of wet and dry gate oxides for SiC MOSFETs.
Autor: | Tanner, Philip G., Dimitrijev, Sima, Harrison, H. Barry |
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Zdroj: | Proceedings of SPIE; Nov1999, Issue 1, p306-312, 7p |
Databáze: | Complementary Index |
Externí odkaz: |
Autor: | Tanner, Philip G., Dimitrijev, Sima, Harrison, H. Barry |
---|---|
Zdroj: | Proceedings of SPIE; Nov1999, Issue 1, p306-312, 7p |
Databáze: | Complementary Index |
Externí odkaz: |