Low-energy model for ion implantation of arsenic and boron into (100) single-crystal silicon.
| Autor: | Obradovic, Borna J., Morris, Steven J., Morris, Michael F., Tian, Shiyang, Wang, Geng, Beardmore, K., Snell, Charles M., Jackson, J., Baummann, S., Tasch Jr., Al F. |
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| Zdroj: | Proceedings of SPIE; Nov1997, Issue 1, p342-353, 12p |
| Databáze: | Complementary Index |
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