Use of nitrogen as a carrier gas in LP-MOCVD for growth of GaAs AlGaAs and quantum well infrared photodetectors heterostructures.

Autor: Zalevsky, Igor D., Chelny, Alexander A., Gorbylev, Vladimir A., Avetisyan, Grachik H., Kulikov, Vladimir B.
Zdroj: Proceedings of SPIE; Nov1995, Issue 1, p733-744, 12p
Databáze: Complementary Index