Use of nitrogen as a carrier gas in LP-MOCVD for growth of GaAs AlGaAs and quantum well infrared photodetectors heterostructures.
Autor: | Zalevsky, Igor D., Chelny, Alexander A., Gorbylev, Vladimir A., Avetisyan, Grachik H., Kulikov, Vladimir B. |
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Zdroj: | Proceedings of SPIE; Nov1995, Issue 1, p733-744, 12p |
Databáze: | Complementary Index |
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