High-quality sub-5-nm oxynitride dielectric films grown on silicon in a nitric oxide ambient using rapid thermal processing.

Autor: Yao, Ze-Qiang, Harrison, H. Barry, Dimitrijev, Sima, Yeow, Y. T.
Zdroj: Proceedings of SPIE; 11/ 1/1994, Issue 1, p265-270, 6p
Databáze: Complementary Index