High-quality sub-5-nm oxynitride dielectric films grown on silicon in a nitric oxide ambient using rapid thermal processing.
Autor: | Yao, Ze-Qiang, Harrison, H. Barry, Dimitrijev, Sima, Yeow, Y. T. |
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Zdroj: | Proceedings of SPIE; 11/ 1/1994, Issue 1, p265-270, 6p |
Databáze: | Complementary Index |
Externí odkaz: |