| Autor: |
Teo, K. L., Li, M. F., Goo, C. H., Lau, W. S., Lim, Y. T. |
| Předmět: |
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| Zdroj: |
International Journal of Electronics; Jul97, Vol. 83 Issue 1, p29-36, 8p |
| Abstrakt: |
Two electron traps and a hole trap have been observed in vapour phase epitaxial GaAs P materials by deep level transient spectroscopy. The dominant electron 0.6 0.4 trap A, which has never previously been reported, has a thermal emission activation energy of E A = 0.83 eV and an abnormally large capture activation e energy E A = 0.73 eV. Hole trap C with thermal emission activation energy of c E C = 0.65 eV is also new and different from previous reports. A critical e comparison of traps reported in this work with traps reported in the existing literature is also made. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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