Carrier escape time in GaAs/AlGaAs and InGaAs/GaAs quantum well lasers.

Autor: Esquivias, Ignacio, Romero Herrero, Beatriz, Weisser, S., Czotscher, Konrad, Ralston, John D., Larkins, Eric C., Arias, Julia, Schoenfelder, A., Mikulla, Michael, Fleissner, Joachim, Rosenzweig, Josef
Zdroj: Proceedings of SPIE; Nov1996, Issue 1, p17-26, 10p
Databáze: Complementary Index