Highly reliable 808-nm laser diodes with AlInGaAs strained quantum well grown by MOCVD.
| Autor: | Zalevsky, Igor D., Bulaev, Peter V., Padalitsa, Anatoliy A., Gorbylev, Vladimir A. |
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| Zdroj: | Proceedings of SPIE; Nov1996, Issue 1, p50-58, 9p |
| Databáze: | Complementary Index |
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