Very low-noise Al0.3Ga0.7As/In0.35Ga0.65As/GaAs single quantum-well pseudomorphic HEMTs.
| Autor: | Chao, P. C., Ho, Pin, Duh, K. H., Smith, P. M., Ballingall, J. M., Jabra, Amani A., Lewis, N., Hall, E. L. |
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| Zdroj: | Proceedings of SPIE; Nov1990, Issue 1, p238-242, 5p |
| Databáze: | Complementary Index |
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