Annealing characteristics of Hg1-xCdxTe grown by organometallic vapor phase epitaxy.
| Autor: | Parat, Krishna K., Taskar, Nikhil R., Bhat, Ishwara B., Ghandhi, Sorab K. |
|---|---|
| Zdroj: | Proceedings of SPIE; Nov1990, Issue 1, p552-560, 9p |
| Databáze: | Complementary Index |
| Externí odkaz: |
|