An ultra-narrow FinFET poly-Si gate structure fabricated with 193nm photolithography and in-situ PR/BARC and TEOS hard mask etching.
| Autor: | Liao, Wen-Shiang, Wu, Cheng-Han, Tang, Mao-Chyuan, Huang, Sheng-Yi, Shih, Tommy, Liaw, Yue-Gie, Chen, Kun-Ming, Chen, Tung-Hung, Tsen, Huan-Chiu, Chung, Lee |
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| Zdroj: | Proceedings of SPIE; Nov2008, Issue 1, p69212N-69212N-6, 6p |
| Databáze: | Complementary Index |
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