Low dislocation density GaN grown by MOCVD with SiNx nano-network.
| Autor: | Xie, J., Özgür, Ü., Fu, Y., Ni, X., Morkoç, H., Inoki, C. K., Kuan, T. S., Foreman, J. V., Everitt, H. O. |
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| Zdroj: | Proceedings of SPIE; Nov2007, Issue 1, p647304-647304-8, 8p |
| Databáze: | Complementary Index |
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