Growth and characterization of AlGaN/GaN epitaxial layers by MOCVD on SiC substrates for RF device applications.
| Autor: | Sood, Ashok K., Singh, Rajwinder, Puri, Yash R., Clarke, Frederick W., Laboutin, Oleg, Deluca, Paul M., Wesler, Roger E., Deng, Jie, Hwang, James C. M. |
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| Zdroj: | Proceedings of SPIE; Nov2006, Issue 1, p61210D-61210D-13, 13p |
| Databáze: | Complementary Index |
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