Investigating the differences in low-frequency noise behavior of npn and pnp SiGe HBTs fabricated in a complementary SiGe HBT BiCMOS on SOI technology.
| Autor: | Zhao, Enhai, Krithivasan, Ramkumar, Sutton, Akil K., Jin, Zhenrong, Cressler, John D., El-Kareh, Badih, Balster, Scott, Yasuda, Hiroshi |
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| Zdroj: | Proceedings of SPIE; Nov2005, Issue 1, p132-142, 11p |
| Databáze: | Complementary Index |
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